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| UTC 2SA1507 PNP EPITAXIAL SILICON TRANSISTORS SWITCHING TRANSISTOR APPLICAITONS *Color TV audio output, converters, inverters. FEATURES *High breakdown voltage *Large current capacitance. *High-speed switching 1 TO-126 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25C ) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Peak) Collector Dissipation Collector Dissipation(Tc=25C) Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO Ic Icp Pc Pc Tj TSTG RATINGS -180 -160 -6 -1.5 -2.5 1.5 10 150 -55 to +150 UNIT V V V A A W W C C ELECTRICAL CHARACTERISTICS (Ta=25C) PARAMETER Collector-to-Base Breakdown Voltage Collector-to-Base Breakdown Voltage Emitter-to-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Gain Bandwidth Product Output Capacitance Turn-On Time SYMBOL V(BR)CBO V(BR)CEO V(BR) EBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob ton TEST CONDITIONS Ic=-10A IE=0 Ic= -1mA,RBE= Ic=0, IE= -10A VCB= -120V,IE=0 VEB= -4V,Ic=0 VCE= -5V,Ic= -100mA VCE= -5V,Ic= -10mA Ic= -500mA,IB= -50mA Ic= -500mA,IB= -50mA VCE= -10V,Ic= -50mA VCB= -10V, f=1MHz See specified Test Circuit MIN -180 -160 -6 TYP MAX UNIT V V V A A 100 90 -0.2 -0.83 120 22 0.04 -0.1 -0.1 400 -0.5 -1.2 V V MHz pF s UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R204-009,A UTC 2SA1507 PARAMETER Storage Time Fall Time PNP EPITAXIAL SILICON TRANSISTORS SYMBOL tstg tf TEST CONDITIONS See specified Test Circuit See specified Test Circuit MIN TYP 0.7 0.04 MAX UNIT s s CLASSIFICATION OF hFE1 RANK RANGE R 100-200 S 140-280 T 200-400 SWITCHING TIME TEST CIRCUIT PW=20s D.C.1% INPUT 50 VR IB2 IB1 RB + OUTPUT RL + 14.3 100F 470F 5V -100V -10IB1=10IB2=IC= 0.7A UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R204-009,A UTC 2SA1507 PNP EPITAXIAL SILICON TRANSISTORS Ic-VCE Ic-VCE TYPICAL CHARACTERISTICS -1.8 -1.6 Collector Current Ic -A Collector Current Ic -A -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0 0 -1 -2 -4 0m A -1.0 -5.0mA -60mA -80mA A -20m -0.8 -4.5mA -4.0mA -3.5mA -3.0mA -2.5mA -2.0mA -1.5mA -0.6 -5mA -2mA -1mA -3 -4 -0.4 -0.2 -10mA -1.0mA -0.5mA IB=0 -40 -50 IB=0 -5 0 0 -10 -20 -30 Collector -to-Emitter Voltage,V CE-V Ic-VBE -1.6 -1.4 Collector Current ,Ic -A -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 Base-to-Emitter Voltage,V BE-V -1.2 Ta =75 Ta =-25 Ta =25 VCE= -5V DC Current Gain,hFE 5 3 2 100 7 5 3 2 10 7 5 7 -0.01 Collector -to-Emitter Voltage,V CE-V hFE -Ic Ta =75 VCE= -5V Ta =25 Ta =-25 2 3 5 7 -0.1 2 3 5 7 -1.0 Collector Current,Ic -A 23 fT -Ic 5 Gain-Bandwidth Product,fT-MHz 3 2 -100 7 5 3 2 -10 7 5 VCE= -10V Output Capacitance,Cob-pF -100 7 5 3 2 -10 7 5 3 7 -1.0 23 5 2 Cob-VCB f=1MHz 7 -0.01 23 5 7 -0.1 23 57 -1.0 2 7 -10 2 3 57 -100 UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R204-009,A UTC 2SA1507 PNP EPITAXIAL SILICON TRANSISTORS Collector-to-Base Voltage,V CB-V VBE(sat)-Ic IC/IB=10 Collector Current,Ic -A VCE(sat)-Ic IC/IB=10 Collector-to-Emitter Saturation Voltage,VBE (sat) -mV -1000 5 3 2 -100 5 3 2 -10 5 3 2 7-0.01 Ta =75 -10 7 5 3 2 -1.0 7 5 3 2 7-0.01 Ta =75 Ta =-25 Collector-to-Emitter Saturation Voltage,VCE (sat) -mV Ta =25 Ta =25 Ta =-25 2 3 5 7 -1.0 2 3 5 7-0.1 Collector Current,Ic -A ASO Icp IC DC 23 2 3 5 7 -1.0 2 3 5 7-0.1 Collector Current,Ic -A Pc -Ta 23 Collector Current,Ic -A -1.0 5 3 2 -10 5 3 Ta = 25 2 -0.01 Single pulse 5 2 357 23 7 -1.0 2 3 5 7 -10 -100 Collector-to-Emitter Voltage,V CE-V 10 0m s Op era DC tio n Op Tc era =2 tio 5 nT c= 25 Collector Dissipation,Pc -W -10 5 3 2 10ms 1m s 1.6 1.5 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 Ambient Temperature,Ta - No he at si n k Pc -Tc 12 10 8 6 4 2 0 Collector Dissipation,Pc -W 0 20 40 60 80 100 120 Case Temperature, Tc- 140 160 UTC UNISONIC TECHNOLOGIES CO. LTD 4 QW-R204-009,A UTC 2SA1507 PNP EPITAXIAL SILICON TRANSISTORS UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 5 QW-R204-009,A |
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